t4 - lds -0 061 -1, rev . 1 (12 1515 ) ?201 2 microsemi corporation page 1 of 7 2n7236u compliant p- channel mosfet qualified per mil - prf - 19500/ 595 qualified levels : jan, jantx , and jantxv description this 2n7236 u switching transistor is military qualified up to t he jan txv level for high - reliability applications . th is device is also available in a to - 254aa leaded package . microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. u (smd - 1 or to - 267ab ) package also available in : to - 254aa package ( leaded ) 2n7236 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec registered 2n 72 36 number . ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/ 595. (see part nomenclature for all available options.) ? rohs complian t by design . applications / benefits ? l ow - profile design. ? military and other high - reliability applications. maximum ratings @ t a = +25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case r ? jc 1.0 o c/w total power dissipation @ t a = +25 c @ t c = +25 c (1) p t 4 125 w gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc (2) i d1 - 18 a drain current, dc @ t c = +100 oc (2) i d2 - 11 a off - state current (peak total value) (3) i dm - 72 a (pk) source current i s - 18 a notes: 1. derate linearly by 1. 0 w/oc for t c > +25 oc . 2. the following formula derives the maximum theoretical i d limit. i d is limited by package and internal wires a nd may also be limited by pin diameter: 3. i dm = 4 x i d1 as calculated in note 2. downloaded from: http:///
t4 - lds -0 061 -1, rev . 1 (12 1515 ) ?201 2 microsemi corporation page 2 of 7 2n7236u mechanical and packaging ? case: ceramic and g old over n ickel p lated s teel . ? terminals: gold over n ickel p lated t ungsten/ c opper . ? marking: manufacturers id, p art number, and date code. ? weight: 0.9 gram s. ? see package dimensions on last page. part nomenclature jan 2n7236 u reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial smd surface mount package jedec ty pe number (see electrical characteristics table) symbols & definitions symbol definition di/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i f forward c urrent r g gate d rive i mpedance v dd drain s upply v oltage v ds drain s ource v oltage, dc v gs gate s ource v oltage, dc downloaded from: http:///
t4 - lds -0 061 -1, rev . 1 (12 1515 ) ?201 2 microsemi corporation page 3 of 7 2n7236u electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character istics drain - source breakdown voltage v gs = 0 v, i d = 1.0 ma v (br)dss - 100 v gate - source voltage (threshold) v ds v gs , i d = - 0.25 ma v ds v gs , i d = - 0.25 ma, t j = +125 c v ds v gs , i d = - 0.25 ma, t j = - 55 c v gs(th)1 v gs(th)2 v gs(th)3 - 2.0 - 1.0 - 4.0 - 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125 c i gss1 i gss2 100 2 00 na drain current v gs = 0 v, v ds = - 80 v i dss1 - 25 a drain current v gs = 0 v, v ds = - 10 0 v, t j = +125 c i dss2 - 1.0 ma drain current v gs = 0 v, v ds = - 80 v, t j = +125 c i dss3 - 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = - 11 .0 a pulsed r ds(on)1 0.20 ? static drain - source on - state resistance v gs = - 10 v, i d = -18 .0 a pulsed r ds(on)2 0.22 ? static drain - source on - state resistance t j = +125c v gs = - 10 v, i d = -11 .0 a pulsed r ds(on)3 0.34 ? diode forward vol tage v gs = 0 v, i d = - 18 .0 a pulsed v sd - 5.0 v dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = - 10 v, i d = - 18 .0 a, v ds = - 50 v q g(on) 60 nc gate to source charge v gs = -1 0 v, i d = - 18 .0 a, v ds = - 50 v q gs 13 nc gate to drain charge v gs = - 10 v, i d = - 18 .0 a, v ds = - 50 v q gd 35.2 nc downloaded from: http:///
t4 - lds -0 061 -1, rev . 1 (12 1515 ) ?201 2 microsemi corporation page 4 of 7 2n7236u electrical characteristics @ t a = +25 c, unless otherwise noted (continued) switching characteristics parameters / test conditio ns symbol min. max. unit turn - on delay time i d = - 11 .0 a, v gs = - 10 v, r g = 9.1 ? , v dd = - 50 v t d(on) 35 ns rinse time i d = - 11 .0 a, v gs = - 10 v, r g = 9.1 ? , v dd = - 50 v t r 85 ns turn - off delay time i d = - 11 .0 a, v gs = - 10 v, r g = 9.1 ? , v dd = - 50 v t d(off) 85 ns fall time i d = - 11 .0 a, v gs = - 10 v, r g = 9.1 ? , v dd = - 50 v t f 65 ns diode reverse recovery time di/dt 100 a/s, v dd 30 v, i f = - 18 .0 a t rr 280 ns downloaded from: http:///
t4 - lds -0 061 -1, rev . 1 (12 1515 ) ?201 2 microsemi corporation page 5 of 7 2n7236u graphs t 1 , rectangle pulse duration (sec onds ) figure 1 thermal impedance curves t c case temperature (oc) figure 2 maximum d rain c urrent vs c ase t emperature g raphs thermal response (z jc ) i d drain current (a mperes ) downloaded from: http:///
t4 - lds -0 061 -1, rev . 1 (12 1515 ) ?201 2 microsemi corporation page 6 of 7 2n7236u graphs (continued) v ds , drain - to - source voltage (volts) figure 3 maximum s afe o perating a rea i d drain current (amperes) downloaded from: http:///
t4 - lds -0 061 -1, rev . 1 (12 1515 ) ?201 2 microsemi corporation page 7 of 7 2n7236u package dimensions no tes: 1. dimensions are in inches. 2. millimeters are given for general information onl y. 3. the lid shall be electrically isolated from the drain, gate and source. 4. in accordance w it h asme y14.5m, diameters are equivalent to x sy mbolog y. sy mbol dimensions inch millimeters min max min max bl .62 0 .630 15.75 16.00 bw .445 .455 11.30 11.56 ch - .142 - 3.60 lh .010 .020 .026 .050 ll1 .410 .420 10.41 10.67 ll2 .152 .162 3.86 4.11 ls1 . 21 0 bsc 5.33 bsc ls2 . 105 bsc 2.67 bsc lw1 .370 .380 9.40 9.65 lw2 .135 .145 3.43 3.68 q1 .030 - 0.76 - q2 .035 - 0.89 - term 1 drain term 2 gate term 3 source downloaded from: http:///
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